On-Pixel Intelligent CMOS (OPIC) sensor

Technology abstract

A leading UK science research organisation has developed a CMOS (Complementary Metal Oxide Semiconductor) image detector that can store a time value each time the sensor output signal amplitude surpasses a reference voltage; an event known as a ‘hit’. This functionality is especially useful in the detection of sudden external events and thus in real-time applications such as medical imaging or automated safety mechanisms.

- Helen Rogerson -

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The CMOS image detector offered here can store a time value (to 10 nanosecond accuracy) each time the sensor output signal amplitude surpasses a reference voltage. The pixel is reset immediately after such an event, allowing multiple hits to be detected per exposure period. The reference voltage corresponding to a hit can be altered to provide greater sophistication in the detection of hits, and hit flag generators can be used to identify pixels of interest; reducing the readout time by omitting pixels that are not of interest.

The ability to record changes in incident radiation within a single exposure period
The ability to time tag events to 10 ns accuracy provides the means for making time-of-flight and correlation measurements, which cannot be done with conventional CMOS or CCD sensors
MHz to GHz event rates can be achieved before event pile up occurs, which is orders of magnitude faster than currently available CCD-based readout
Reduced data readout and analysis overheads in photon, ion, and electron imaging applications
Improved signal-to-noise ratio (SNR)

Current:

The sensor was originally developed for a spectrometer on ESA's Solar Orbiter (due to launch in 2018).

Potential:

Any CMOS imaging application, including:

Industrial analysis
Medical imaging
Defence applications
Spectroscopy
High-energy physics
Robotics

Diagram of OPIC Array and Data Processing